Semiconductor memory device

ABSTRACT

A semiconductor memory device includes a substrate including a logic circuit, a memory cell array disposed over the substrate, a first conductive group including a plurality of bit lines and a first upper source line that are coupled to the memory cell array and spaced apart from each other and a first upper wire that is coupled to the logic circuit, an insulating structure covering the first conductive group.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority under 35 U.S.C. § 119(a) toKorean patent application number 10-2019-0140888, filed on Nov. 6, 2019,in the Korean Intellectual Property Office, the entire disclosure ofwhich is incorporated herein by reference.

BACKGROUND 1. Technical Field

Various embodiments generally relate to a semiconductor memory device,and more particularly, to a semiconductor memory device including amemory cell array coupled to bit lines.

2. Related Art

A semiconductor memory device may include a memory cell array includingmemory cells that may store data and a peripheral circuit controllingthe operations of the memory cell array. The memory cell array and theperipheral circuit may be coupled to wires that transfer signals fordriving the semiconductor memory device.

SUMMARY

According to an embodiment, a semiconductor memory device may include asubstrate including a logic circuit, a memory cell array disposed overthe substrate, a first conductive group including a plurality of bitlines and a first upper source line that are coupled to the memory cellarray and spaced apart from each other and a first upper wire that iscoupled to the logic circuit, an insulating structure covering the firstconductive group, a second conductive group including a second uppersource line and a second upper wire and disposed over the insulatingstructure, and an upper source contact portion embedded in theinsulating structure.

According to an embodiment, a semiconductor memory device may include achannel structure extending from a lower source line, a gate stackstructure including interlayer insulating layers and conductive patternsthat surround the channel structure and are alternately stacked on eachother, a lower source contact portion extending in parallel with thechannel structure from the lower source line, a bit line overlapping thegate stack structure and coupled to the channel structure, a first uppersource line coupled to the lower source contact portion.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram illustrating a semiconductor memory deviceaccording to an embodiment;

FIG. 2 is an equivalent circuit diagram illustrating a memory blockaccording to an embodiment;

FIG. 3 is a diagram illustrating the schematic configuration of asemiconductor memory device according to an embodiment;

FIG. 4 is a plan view illustrating a first contact group and a firstconductive group according to an embodiment;

FIGS. 5 and 6 are plan views illustrating a second contact groupaccording to an embodiment;

FIG. 7 is a plan view illustrating a second conductive group accordingto an embodiment;

FIGS. 8A and 8B are cross-sectional diagrams of a semiconductor memorydevice taken along lines I-I′ and II-II′ shown in FIG. 7;

FIGS. 9A and 9B are cross-sectional diagrams illustrating memory cellstrings according to various embodiments;

FIGS. 10A, 10B, and 11 are diagrams illustrating an embodiment of aprocess of forming a shielding pattern that overlaps a first conductivegroup;

FIGS. 12A and 12B are cross-sectional diagrams illustrating anembodiment of a process of forming first to third contact patterns;

FIGS. 13A and 13B are cross-sectional diagrams illustrating anembodiment of a process of forming a second conductive group;

FIG. 14 is a block diagram illustrating the configuration of a memorysystem according to an embodiment; and

FIG. 15 is a block diagram illustrating the configuration of a computingsystem according to an embodiment.

DETAILED DESCRIPTION

The specific structural or functional descriptions disclosed herein aremerely illustrative for the purpose of describing embodiments accordingto the concept of the present disclosure. The embodiments according tothe concept of the present disclosure may be implemented in variousforms, and should not be construed as limited to the embodiments setforth herein.

Various embodiments may be directed to a semiconductor memory devicecapable of reducing constraints with respect to upper wires.

FIG. 1 is a block diagram illustrating a semiconductor memory device 10according to an embodiment.

Referring to FIG. 1, the semiconductor memory device 10 may include alogic circuit LC and a memory cell array 40. The logic circuit LC mayinclude an internal voltage generator 20 and a peripheral circuit 30.

The internal voltage generator 20 may be configured to receive anexternal voltage to generate various internal voltages. The internalvoltages output from the internal voltage generator 20 may be suppliedto the peripheral circuit 30. According to an embodiment, internalvoltages may include an internal power voltage VCCI and an internalground voltage VSSI.

The peripheral circuit 30 may be configured to perform a programoperation to store data in the memory cell array 40, a read operation tooutput the data stored in the memory cell array 40, and an eraseoperation to erase the data stored in the memory cell array 40. Internalvoltages used to activate the peripheral circuit 30 may be supplied fromthe internal voltage generator 20 to the peripheral circuit 30.

According to an embodiment, the peripheral circuit 30 may includecontrol logic 39, an operation voltage generator 31, a row decoder 33, asource line driver 37, and a page buffer group 35.

The memory cell array 40 may include a plurality of memory blocks. Eachof the memory blocks may be coupled to one or more drain select linesDSLs, a plurality of word lines WLs, one or more source select linesSSLs, a plurality of bit lines BLs, and a common source structure CSL.

The control logic 39 may control the peripheral circuit 30 in responseto a command CMD and an address ADD. The control logic may beimplemented in hardware, software, or a combination thereof. Forexample, the control logic may be realized as a control logic circuitoperating in accordance with an algorithm.

The operation voltage generator 31 may generate various operationvoltages VOPs used to perform a program operation, a read operation, andan erase operation in response to the control of the control logic 39.The operation voltages VOPs may include a program voltage, a verifyvoltage, a pass voltage, a select line voltage, and the like.

The row decoder 33 may select a memory block in response to the controlof the control logic 39. The row decoder 33 may be configured to applythe operation voltages VOPs to the drain select lines DSLs, the wordlines WLs, and the source select lines SSLs coupled to the selectedmemory block.

The source line driver 37 may be coupled to the memory cell array 40through the common source structure CSL. The source line driver 37 maybe configured to perform a discharge operation of the common sourcestructure CSL in response to the control of the control logic 39. Thesource line driver 37 may apply a pre-erase voltage Vepre and an erasevoltage Verase to the common source structure CSL during an eraseoperation in response to the control of the control logic 39. Thepre-erase voltage Vepre and the erase voltage Verase may be generated inthe operation voltage generator 31.

The page buffer group 35 may be coupled to the memory cell array 40through the bit lines BLs. The page buffer group 35 may temporarilystore data received from an input/output circuit (not illustrated)during a program operation in response to the control of the controllogic 39. The page buffer group 35 may sense a voltage or a current ofthe bit lines BLs during a read operation or a verify operation inresponse to the control of the control logic 39. The page buffer group35 may selectively float the bit lines BLs in response to the control ofthe control logic 39.

FIG. 2 is an equivalent circuit diagram illustrating a memory block BLKaccording to an embodiment.

Referring to FIG. 2, the memory block BLK may include a plurality ofmemory cell strings STR coupled in common to the common source structureCSL. The memory cell strings STR may be coupled to a plurality of bitlines BL1 to BLm. The memory cell strings STR may be classified into aplurality of column groups respectively coupled to the plurality of bitlines BL1 to BLm. The memory cell strings STR of each of the columngroups may be coupled in parallel to a bit line corresponding thereto.

Each of the memory cell strings STR may include one or more drain selecttransistor coupled to a corresponding bit line, one or more sourceselect transistor coupled to the common source structure CSL, and aplurality of memory cells coupled in series between the drain selecttransistor and the source select transistor. A gate of the drain selecttransistor may be coupled to a drain select line corresponding thereto,a gate of each of the memory cells may be coupled to a word linecorresponding thereto, and a gate of the source select transistor may becoupled to a source select line corresponding thereto.

According to an embodiment, each of the memory cell strings STR may becoupled to the drain select line DSL, a plurality of word lines WL1 toWLn, and the source select line SSL. Each of the memory cell strings STRmay include a drain select transistor DST coupled to the drain selectline DSL, a plurality of memory cells MC coupled to the word lines WL1to WLn, and a source select transistor SST coupled to the source selectline SSL. The memory cells MC of each of the memory cell strings STR maybe coupled in series.

The memory cells MC coupled in series and the bit line correspondingthereto may be coupled to each other through the drain select transistorDST. The drain select transistor DST may include a junction coupled tothe bit line corresponding thereto. The memory cells MC coupled inseries and the common source structure CSL may be coupled to each otherthrough the source select transistor SST. The source select transistorSST may include a junction coupled to the common source structure CSL.

A structure of each of the memory cell strings STR is not limited to theembodiment shown in FIG. 2. According to an embodiment, each of thememory cell strings STR may include two or more drain select transistorscoupled in series to a bit line corresponding thereto. According to thisembodiment, two or more layers of drain select lines may be disposedbetween the bit lines BL1 to BLm and the word lines WL1 to WLn.According to another embodiment, each of the memory cell strings STR mayinclude two or more source select transistors coupled in series to thecommon source structure CSL. According to this embodiment, two or morelayers of source select lines may be disposed under the word lines WL1to WLn.

At least one of the word lines WL1 to WLn may serve as a dummy wordline. For example, at least one of the word line WL1 adjacent to thesource select line SSL and the word line WLn adjacent to the drainselect line DSL may serve as a dummy word line.

An erase operation of a semiconductor memory device may include a formperiod of a hot hole and an erase period.

Referring to FIGS. 1 and 2, during the form period of the hot hole ofthe erase operation, the row decoder 33 may control the word lines WL1to WLn of a selected memory block to be in a floating state and the pagebuffer group 35 may control the bit lines BL1 to BLm of the selectedmemory block to be in a floating state.

The operation voltage generator 31 may apply the pre-erase voltage Vepreto generate a Gate Induced Drain Leakage (GIDL) current to the commonsource structure CSL during the form period of the hot hole of the eraseoperation. When a voltage level of the source select line SSL is low,the GIDL current may be generated between a junction of the sourceselect transistor SST coupled to the common source structure CSL and thesource select line SSL. According to an embodiment, the row decoder 33may control the source select line SSL to have a ground voltage levelduring a form period of a hot hole of an erase operation.

When the GIDL current is generated, hot holes may be generated. Thegenerated hot holes may be injected into a channel region of the memorycell string STR. Accordingly, a channel voltage of the memory cellstring STR may be increased.

Subsequently, the operation voltage generator 31 may apply the erasevoltage Verase greater than the pre-erase voltage Vepre to the commonsource structure CSL during the erase period of the erase operation. Asa result, the channel voltage of the memory cell string STR may befurther increased.

The row decoder 33 may control the source select line SSL to be in afloating state and the word lines WL1 to WLn to have a ground voltagelevel during the erase period of the erase operation. Accordingly, datastored in the memory cells MC may be erased by voltage differencebetween the word lines WL1 to WLn and the channel region of the memorycell string STR which has an increased potential level.

The erase operation may finish by adjusting the source select line SSLto have a ground voltage level through the row decoder 33 to turn offthe source select line SSL.

The voltage applied to the common source structure CSL may be applied tothe bit lines BL1 to BLm and the voltage applied to the source selectline SSL may be applied to the drain select line DSL during the eraseoperation to improve efficiency of the above-described GIDL eraseoperation. According to this embodiment, the GIDL current may begenerated between the drain select line DSL and the junction of thedrain select transistor DST during the erase operation, such thatefficiency of the erase operation may be improved.

FIG. 3 is a diagram illustrating the schematic configuration of thesemiconductor memory device 10 according to an embodiment.

Referring to FIG. 3, the semiconductor memory device 10 may include aninterconnection group 25, the memory cell array 40, a first contactgroup 50, a first conductive group 60, a second contact group 80, and asecond conductive group 90 sequentially stacked over a substrate 15including the logic circuit LC described with reference to FIG. 1. Thesemiconductor memory device 10 may further include a via contactstructure VIA disposed between the first conductive group 60 and theinterconnection group 25.

The substrate 15 may include a first region A1 which overlaps the memorycell array 40 and a second region A2 which does not overlap the memorycell array 40. The via contact structure VIA may overlap the secondregion A2 of the substrate 15.

The interconnection group 25 may include a plurality of conductivelines, a plurality of conductive pads, and a plurality of contact plugscoupled to the logic circuit LC described with reference to FIG. 1.

The memory cell array 40 may include the plurality of memory cellstrings STR described with reference to FIG. 2. The memory cell array 40may overlap a part of the logic circuit LC described with reference toFIG. 1.

The via contact structure VIA may be coupled to the internal voltagegenerator 20 of the logic circuit LC described with reference to FIG. 1.

The first contact group 50 may include bit line contact plugs and asource contact plug. The bit line contact plugs may be coupled to thememory cell strings STR described with reference to FIG. 2. The sourcecontact plug may form the common source structure CSL described withreference to FIG. 2.

The first conductive group 60 may include bit lines, a first uppersource line, and a first upper wire. The bit lines BL1 to BLm describedwith reference to FIG. 2 may correspond to the bit lines of the firstconductive group 60. The first upper source line may form the commonsource structure CSL described with reference to FIG. 2. The first upperwire may be coupled to the via contact structure VIA.

The second contact group 80 may include a contact pattern and an uppersource contact portion. The contact pattern may be coupled to the firstupper wire. The upper source contact portion may form the common sourcestructure CSL described with reference to FIG. 2.

The second conductive group 90 may include a second upper wire and asecond upper source line. The second upper wire may be a power linetransferring the internal power voltage VCCI or the internal groundvoltage VSSI described with reference to FIG. 1 to the peripheralcircuit 30. The second upper source line may form the common sourcestructure CSL described with reference to FIG. 2.

FIG. 4 is a plan view illustrating the first contact group 50 and thefirst conductive group 60 according to an embodiment.

Referring to FIG. 4, the first conductive group 60 may include bit lines161A and a first upper source line 161B overlapping the first region A1and a first upper wire 161C overlapping the second region A2. The bitlines 161A and the first upper source line 161B may overlap athree-dimensional memory cell array. The three-dimensional memory cellarray may include gate stack structures GST. The bit lines 161A and thefirst upper source line 161B may overlap the gate stack structures GST.The bit lines 161A, the first upper source line 161B, and the firstupper wire 161C may be spaced apart from each other and may be disposedin substantially the same level. The bit lines 161A, the first uppersource line 161B, and the first upper wire 161C may include the sameconductive material. According to an embodiment, the bit lines 161A, thefirst upper source line 161B, and the first upper wire 161C may includelow-resistance metal such as copper (Cu).

Each of the gate stack structures GST may extend to overlap the firstregion A1 and to cross the bit lines 161A. The gate stack structures GSTmay be separated from each other by a slit SI. The gate stack structuresGST may form a single memory block or individually form different memoryblocks.

Each of the gate stack structures GST may be penetrated by channelstructures and the channel structures may be coupled to bit line contactplugs 155A. A lower source contact portion may be disposed in the slitSI and may be coupled to a source contact plug 155B.

Each of the bit lines 161A may be connected to the bit line contact plug155A corresponding thereto. The first upper source line 161B may beconnected to the source contact plug 155B.

FIGS. 5 and 6 are plan views illustrating the second contact group 80according to an embodiment.

Referring to FIGS. 5 and 6, the second contact group 80 may include ashielding pattern 181 extending to overlap the first region A1 and thesecond region A2, a first contact pattern 183A and second contactpatterns 183B extending from the shielding pattern 181, and a thirdcontact pattern 183C insulated from the shielding pattern 181.

The shielding pattern 181 and the first contact pattern 183A and thesecond contact patterns 183B coupled to the shielding pattern 181 mayform an upper source contact portion.

Each of the shielding pattern 181, the first contact pattern 183A, thesecond contact patterns 183B, and the third contact pattern 183C mayinclude a metal barrier layer and a metal layer formed over the metalbarrier layer. For example, a metal barrier layer may include, forexample but not limited to, a titanium nitride (TiN) layer and a metallayer may include tungsten (W).

FIG. 5 is a plan view illustrating the shielding pattern 181 accordingto an embodiment.

Referring to FIG. 5, the shielding pattern 181 may surround a pluralityof first insulating pillars SP1 and a plurality of second insulatingpillars SP2 and may be penetrated by a plurality of first openings OP1.

The first openings OP1 may overlap the first upper source line 161Bdescribed with reference to FIG. 4. The first insulating pillars SP1 maybe disposed at opposite sides of the first upper source line 161B.According to an embodiment, the first insulating pillars SP1 may overlapthe bit lines 161A described above with reference to FIG. 4. The secondinsulating pillars SP2 may overlap the first upper wire 161C describedwith reference to FIG. 4. The central regions of the second insulatingpillars SP2 may be penetrated by second openings OP2 in a one-to-onemanner.

FIG. 6 is a plan view illustrating the first, second, and third contactpatterns 183A, 183B, and 183C according to an embodiment.

Referring to FIG. 6, the first contact pattern 183A may include firstvertical portions VPa and a first line portion LPa coupling the firstvertical portions VPa to each other. The first vertical portions VPa mayextend from the first upper source line 161B described with reference toFIG. 4 and may fill the first openings OP1 described above withreference to FIG. 5, respectively. The first line portion LPa mayoverlap the first vertical portions VPa and may extend in parallel withthe first upper source line 161B.

The second contact patterns 183B may be disposed at opposite sides ofthe first contact pattern 183A. According to an embodiment, each of thesecond contact patterns 183B may overlap some of the bit lines 161Adescribed with reference to FIG. 4.

The third contact pattern 183C may include second vertical portions VPband a second line portion LPb coupling the second vertical portions VPbto each other. The second vertical portions VPb may extend from thefirst upper wire 161C described with reference to FIG. 4 and may fillthe second openings OP2 described above with reference to FIG. 5,respectively. The second line portion LPb may overlap the secondvertical portions VPb and may extend in parallel with the first upperwire 161C. Because each of the second vertical portions VPb may besurrounded by the second insulating pillar SP2 described above withreference to FIG. 5, the second vertical portions VPb may be insulatedfrom the shielding pattern 181 shown in FIG. 5.

FIG. 7 is a plan view illustrating the second conductive group 90according to an embodiment.

Referring to FIG. 7, the second conductive group 90 may include a secondupper source line 191A extending from the first and second contactpatterns 183A and 183B described with reference to FIG. 6 and a secondupper wire 191B extending from the third contact pattern 183C describedwith reference to FIG. 6. The second upper source line 191A and thesecond upper wire 191B may be spaced apart from each other and may bedisposed in substantially the same level. The second upper source line191A and the second upper wire 191B may include the same conductivematerial.

The second upper source line 191A may form the common source structureCSL described with reference to FIGS. 1 and 2. The source line driver 37described with reference to FIG. 1 may be coupled to the memory cellarray 40 described with reference to FIG. 1 through the second uppersource line 191A.

The second upper wire 191B may be a power line transferring the internalpower voltage VCCI or the internal ground voltage VSSI described withreference to FIG. 1 to the peripheral circuit 30 described withreference to FIG. 1.

The second conductive group 90 may include a conductive material havinglower resistance compared to the second contact group 80 described abovewith reference to FIGS. 5 and 6. For example, the second conductivegroup 90 may include aluminum (Al). When the second conductive group 90includes aluminum having low resistance, the internal power voltage VCCIor the internal ground voltage VSSI may be stably transferred even whenthe second conductive group 90 includes a power line.

According to an embodiment, even when resistance of the second upperwire 191B that serves as a power line is low, noise due to couplingcapacitance between the bit lines 161A described above with reference toFIG. 4 and the second upper wire 191B may be reduced through theshielding pattern 181 described above with reference to FIG. 5.Accordingly, constraints on arrangement degree of freedom of the secondupper wire 191B due to noise constraints may be reduced.

According to an embodiment, the first upper source line 161B shown inFIG. 4 and the second upper source line 191A shown in FIG. 7 may becoupled to each other through the shielding pattern 181 shown in FIG. 5,the first contact pattern 183A, and the plurality of second contactpatterns 183B. Accordingly, resistance of an interconnection structureof the first upper source line 161B and the second upper source line191A may be reduced, and thus source line bouncing may be reduced.

As described above, because the noise and the source line bouncing arereduced, the operating characteristics of the semiconductor memorydevice may be improved.

FIGS. 8A and 8B are cross-sectional diagrams of a semiconductor memorydevice taken along lines I-I′ and II-II′ shown in FIG. 7.

Referring to FIGS. 8A and 8B, the substrate 15 may include the firstregion A1 and the second region A2. The first region A1 may be a regionwhich overlaps the gate stack structures GST and the second region A2may be a region which laterally protrudes further than the gate stackstructures GST. The substrate 15 may include the logic circuit LCdescribed with reference to FIG. 1.

The logic circuit of the substrate 15 may be formed over a bulk siliconsubstrate, a silicon-on-insulator substrate, a germanium substrate, agermanium-on-insulator substrate, a silicon-germanium substrate, or anepitaxial layer formed by a selective epitaxial growth method. Accordingto an embodiment, the logic circuit LC may include a plurality oftransistors TR. The transistors TR may be disposed over active regionsACT defined by isolation layers 103. Each of the transistors TR mayinclude a gate insulating layer 107 and a gate electrode 109 stackedover the active region ACT corresponding thereto and may also includejunctions 105 formed in opposite sides of the gate electrode 109 in theactive region ACT. One of the junctions 105 may serve as a source regionand the other of the junctions 105 may serve as a drain region. Astructure of the transistors TR and the isolation layers 103 is notlimited to the embodiment illustrated in FIG. 8A but may be variouslychanged according to a design rule of a semiconductor memory device. Thelogic circuit LC may include various elements other than the transistorsTR illustrated in FIG. 8A.

The logic circuit of the substrate 15 may be coupled to theinterconnection group 25 described with reference to FIG. 3. Forexample, the interconnection group 25 may include first connectionstructures 25A, second connection structures 25B, and a third connectionstructure 25C. The first connection structures 25A may be coupled to thejunctions 105 of the transistors TR, respectively. Each of the secondconnection structures 25B may be coupled to the gate electrode 109 ofthe transistors TR corresponding thereto. Each of the first and secondconnection structures 25A and 25B may include conductive patternsstacked over the substrate 15, coupled to each other, and having variousforms. The third connection structure 25C may be a pattern coupled to anoutput pad outputting the internal ground voltage VSSI or the internalpower voltage VCCI. The third connection structure 25C may overlap thesecond region A2 of the substrate 15 and might not overlap line I-I′shown in FIG. 7.

The interconnection group including the first, second, and thirdconnection structures 25A, 25B, and 25C and the substrate 15 may becovered by a first lower insulating layer 110. The first lowerinsulating layer 110 may include two or more insulating layers.

The gate stack structures GST may be disposed on a lower source line 111overlapping the first lower insulating layer 110. The lower source line111 may overlap the first region A1. The lower source line 111 may formthe common source structure CSL described with reference to FIGS. 1 and2. The lower source line 111 may include a doped semiconductor layerincluding at least one of an n-type dopant and a p-type dopant. Forexample, the lower source line 111 may include an n-type doped siliconlayer.

A second lower insulating layer 115 may be disposed in the same level asthe lower source line 111. The second lower insulating layer 115 mayoverlap the second region A2.

Each of the gate stack structures GST may be penetrated by channelstructures CHa (see FIG. 8B). Each of the gate stack structures GST maysurround the channel structures CHa corresponding thereto, and includeinterlayer insulating layers 121 and conductive patterns 123 alternatelystacked over the lower source line 111.

The conductive patterns 123 may serve as the source select line SSL, theword lines WL1 to WLn, and the drain select line DSL described withreference to FIG. 2. According to an embodiment, the conductive patterns123 may include a lower conductive pattern that is disposed adjacent tothe lower source line 111 and serves as the source select line SSLdescribed with reference to FIG. 2, an upper conductive pattern that isdisposed adjacent to the bit lines 161A and serves as the drain selectline DSL described with reference to FIG. 2, and intermediate conductivepatterns that are disposed between the upper conductive pattern and thelower conductive pattern and serve as the word lines WL1 to WLndescribed with reference to FIG. 2.

Referring to FIG. 8B, each of the channel structures CHa may extend fromthe lower source line 111. Each of the channel structures CHa mayinclude a channel layer 133. According to an embodiment, the channellayer 133 may be a hollow type and may be in contact with the uppersurface of the lower source line 111. The central region of the channelstructure CHa which is defined by the hollow-type channel layer 133 maybe filled with a core insulating layer 135 and a doped semiconductorlayer 137. The doped semiconductor layer 137 may be disposed on the coreinsulating layer 135. The channel structures CHa are not limited to theembodiment illustrated in FIG. 8B. According to another embodiment, thecore insulating layer 135 may be omitted and the channel layer 133 ofeach of the channel structures CHa may extend to fill the central regionof the channel structure CHa corresponding thereto.

The channel layer 133 may serve as a channel region of a memory cellstring corresponding thereto. The channel layer 133 may include asemiconductor material. According to an embodiment, the channel layer133 may include silicon.

An end of each of the channel structures CHa facing the bit lines 161Amay include an end of the channel layer 133 and the doped semiconductorlayer 137 surrounded by the end of the channel layer 133. At least oneof an n-type dopant and a p-type dopant may be distributed to the end ofeach of the channel structures CHa. According to an embodiment, ann-type dopant may be distributed to an end of each of the channelstructures CHa.

A memory layer 131 may be disposed between each of the channelstructures CHa and the gate stack structure GST corresponding thereto.The memory layer 131 may extend along a sidewall of each of the channelstructures CHa. The memory layer 131 may surround a sidewall of thechannel structure CHa corresponding thereto. The memory layer 131 mayinclude a tunnel insulating layer, a data storage layer, and a blockinginsulating layer sequentially stacked from the sidewall of the channelstructure CHa corresponding thereto towards the gate stack structureGST. The tunnel insulating layer may include silicon oxide allowingcharge tunneling. The data storage layer may include a charge traplayer. For example, the charge trap layer may include silicon nitride.The blocking insulating layer may include an oxide capable of blockingcharges. The data storage layer may include various materials other thanthe charge trap layer and may be changed in various forms between thetunnel insulating layer and the blocking insulating layer according to astructure of a memory cell to be embodied. For example, the data storagelayer may include a phase-change material layer or a material layer fora floating gate.

According to the structure as described above, the memory cells MCdescribed with reference to FIG. 2 may be defined in intersections ofthe intermediate conductive patterns that serve as the word lines amongthe conductive patterns 123 and the channel structure CHa. The sourceselect transistor SST described above with reference to FIG. 2 may bedefined in an intersection of the lower conductive pattern that servesas the source select line among the conductive patterns 123 and thechannel structure CHa. The drain select transistor DST described withreference to FIG. 2 may be defined in an intersection of the upperconductive pattern that serves as the drain select line among theconductive patterns 123 and the channel structure CHa. The source selecttransistor SST, the memory cells MC, and the drain select transistor DSTdescribed with reference to FIG. 2 may be coupled in series by thechannel structure CHa to form the memory cell string STR described withreference to FIG. 2.

Referring to FIGS. 8A and 8B, the gate stack structures GST thatneighbor each other may be separated from each other by the slit SIshown in FIG. 4. The slit SI may be filled with sidewall insulatinglayers 141 and a lower source contact portion 143. The sidewallinsulating layers 141 may be formed on the sidewalls of the slit SI. Thelower source contact portion 143 may fill the central region of the slitSI and may be insulated from the gate stack structures GST by thesidewall insulating layer 141. The lower source contact portion 143 mayinclude various conductive materials and may extend in parallel with thechannel structures CHa from the lower source line 111.

A gap-fill insulating layer 127 may be disposed in the same level as thegate stack structures GST. The gap-fill insulating layer 127 may bedisposed on the second lower insulating layer 115 and may overlap thesecond region A2.

The gate stack structures GST may be covered by a first upper insulatinglayer 125. The first upper insulating layer 125 may be penetrated by thechannel structures CHa, the memory layer 131, the sidewall insulatinglayers 141, and the lower source contact portion 143. The first upperinsulating layer 125 and the gap-fill insulating layer 127 may becovered by a second upper insulating layer 151.

The second upper insulating layer 151 may extend to overlap the firstregion A1 and the second region A2. The second upper insulating layer151 may be penetrated by a first contact group including the bit linecontact plugs 155A and the source contact plug 155B.

The bit line contact plugs 155A may extend to be in contact with thechannel structures CHa, respectively, and to pass through the secondupper insulating layer 151. The channel structures CHa may be coupled tothe bit lines 161A via the bit line contact plugs 155A. Each of the bitline contact plugs 155A may extend from the doped semiconductor layer137 corresponding thereto to the bit line 161A corresponding thereto.

The source contact plug 155B may extend to be in contact with the lowersource contact portion 143 and to pass through the second upperinsulating layer 151. The lower source contact portion 143 may becoupled to the first upper source line 161B via the source contact plug155B. The lower source contact portion 143 may extend from the sourcecontact plug 155B towards the first upper source line 1616.

The second lower insulating layer 115, the gap-fill insulating layer127, and the second upper insulating layer 151 overlapping the secondregion A2 may be penetrated by a vertical contact plug 145. The verticalcontact plug 145 may form the via contact structure VIA described withreference to FIG. 3. The vertical contact plug 145 may include variousconductive materials and extend from the third connection structure 25Ctowards the first upper wire 161C. The vertical contact plug 145 mayoverlap the second region A2 of the substrate 15 and might not overlapline I-I′ shown in FIG. 7. In other words, in a planar viewpoint, theposition of the vertical contact plug 145 may be misaligned with lineI-I′.

The first conductive group including the bit lines 161A, the first uppersource line 161B, and the first upper wire 161C may pass through a thirdupper insulating layer 165 disposed on the second upper insulating layer151. Each of the bit lines 161A may extend to pass through the thirdupper insulating layer 165 and to overlap the gate stack structure GSTand the bit line contact plug 155A corresponding thereto. The firstupper source line 161B may overlap the lower source contact portion 143and the source contact plug 155B. The first upper wire 161C may becoupled to the internal voltage generator 20 of the logic circuit LCdescribed with reference to FIG. 1 through the vertical contact plug 145and the third connection structure 25C.

The bit lines 161A, the first upper source line 161B, and the firstupper wire 161C may be covered by an insulating structure 170 and theshielding pattern 181 and the first, second, and third contact patterns183A, 183B, and 183C may be embedded in the insulating structure 170.

The insulating structure 170 may include a protective layer 171 that mayserve as a diffusion barrier or an etching barrier, a first insulatinglayer 173 and a second insulating layer 175 stacked over the protectivelayer 171. The protective layer 171 may include nitrogen doped siliconcarbide (NDC). For example, the protective layer 171 may include asilicon carbonitride (SiCN) layer. Each of the first insulating layer173 and the second insulating layer 175 may include an oxide layer.

The first contact pattern 183A may extend from the first upper sourceline 161B towards the second upper source line 191A. The first contactpattern 183A may include the first vertical portion VPa and the firstline portion LPa extending from the first vertical portion VPa to passthrough the second insulating layer 175. The first vertical portion VPamay extend from the first upper source line 161B to fill the firstopening OP1 of the shielding pattern 181 described with reference toFIG. 5. The first vertical portion VPa may pass through the protectivelayer 171 and the first insulating layer 173 of the insulating structure170. The first line portion LPa may have an edge overlapping theshielding pattern 181. In an embodiment, the shielding pattern 181 mayextend from a sidewall of the first contact pattern 183A to overlap theplurality of bit lines 161A.

The shielding pattern 181 may fill a groove GV formed in the firstinsulating layer 173. The protective layer 171 and the first insulatinglayer 173 of the insulating structure 170 may extend between the firstconductive group (161A, 161B, and 161C) and the shielding pattern 181.The shielding pattern 181 may be covered by the second insulating layer175. The shielding pattern 181 may extend from the sidewall of the firstvertical portion VPa to overlap the bit lines 161A and the second regionA2. The shielding pattern 181 may be in contact with and surround thesidewall of the first vertical portion VPa.

The second contact patterns 183B may pass through the second insulatinglayer 175 of the insulating structure 170. The second contact patterns183B may extend from the shielding pattern 181 towards the second uppersource line 191A.

The shielding pattern 181 and the first and second contact patterns 183Aand 183B coupled to the shielding pattern 181 may form an upper sourcecontact portion 180.

The third contact pattern 183C may include the second vertical portionVPb and the second line portion LPb extending from the second verticalportion VPb. The second vertical portion VPb may be surrounded by thesecond insulating pillar SP2 as described with reference to FIGS. 5 and6. The second insulating pillar SP2 may be defined as a part of thefirst insulating layer 173 formed on the sidewall of the shieldingpattern 181. The second vertical portion VPb may extend from the firstupper wire 161C to pass through the protective layer 171 and the firstinsulating layer 173 of the insulating structure 170. The second lineportion LPb may extend from the second vertical portion VPb towards thesecond upper wire 191B to be in contact with the second upper wire 191B.The second line portion LPb may pass through the second insulating layer175.

The second conductive group including the second upper source line 191Aand the second upper wire 1918 may be disposed on the insulatingstructure 170. The second upper source line 191A may extend to overlapthe bit lines 161A and the first upper source line 161B. The secondupper source line 191A may be connected to the first upper source line161B via the upper source contact portion 180 and the first upper sourceline 161B may be connected to the lower source line 111 via the sourcecontact plug 155B and the lower source contact portion 143.

The lower source line 111, the lower source contact portion 143, thesource contact plug 155B, the first upper source line 161B, the uppersource contact portion 180, and the second upper source line 191A mayform the common source structure CSL described with reference to FIGS. 1and 2.

According to an embodiment, the increased capacitance may be providedbetween the bit lines 161A and the shielding pattern 181. Accordingly,the shielding pattern 181 transferring an erase voltage may transfer ahigh voltage to the bit lines 161A overlapping the shielding pattern 181by capacitive coupling during an erase operation. Accordingly, theefficiency of the erase operation may be improved even when high-voltagetransistors for applying a high voltage such as an erase voltage to thebit lines 161A are not separately provided to the page buffer group 35shown in FIG. 1.

In addition, the shielding pattern 181 may reduce noise between thesecond upper wire 191B and the bit lines 161A.

FIGS. 9A and 9B are cross-sectional diagrams illustrating memory cellstrings according to various embodiments.

Referring to FIG. 9A, a memory cell string STR′ may be defined along achannel structure CHb passing through a gate stack structure GST′. Thegate stack structure GST′ may have the same structure as the embodimentdescribed with reference to FIGS. 8A and 8B.

The memory cell string STR′ may be coupled to a lower source line 211disposed under the gate stack structure GST′. The lower source line 211may have a structure in which two or more semiconductor layers arestacked. According to an embodiment, the lower source line 211 mayinclude a first semiconductor layer 211A, a second semiconductor layer211B, and a third semiconductor layer 211C. Each of the first, second,and third semiconductor layers 211A, 211B, and 211C may include silicon.Each of the first, second, and third semiconductor layers 211A, 211B,and 211C may include a doped semiconductor layer including at least oneof an n-type dopant and a p-type dopant. The second semiconductor layer211B may be disposed on the first semiconductor layer 211A and the thirdsemiconductor layer 211C may be disposed on the second semiconductorlayer 211B. According to another embodiment which is not illustrated inFIG. 9A, the third semiconductor layer 211C may be omitted.

As described above with reference to FIGS. 8A and 8B, the channelstructure CHb may include a channel layer 233, a core insulating layer235, and a doped semiconductor layer 237. The channel structure CHb mayextend into the lower source line 211. According to an embodiment, thechannel structure CHb may pass through the third semiconductor layer211C and the second semiconductor layer 211B and may extend into thefirst semiconductor layer 211A.

A memory layer 231 may be divided into a first memory pattern 231A and asecond memory pattern 231B by the second semiconductor layer 211B. Thefirst memory pattern 231A may be disposed between the firstsemiconductor layer 211A and a first part of the channel structure CHbthat extends into the first semiconductor layer 211A. The second memorypattern 231B may extend along a sidewall of a second part of the channelstructure CHb that passes through the gate stack structure GST′ and thethird semiconductor layer 211C.

A third part of the channel structure CHb that is disposed between thefirst part and the second part may be surrounded by the secondsemiconductor layer 211B. The second semiconductor layer 211B may extendbetween the first and second memory patterns 231A and 231B and may be indirect contact with the third part of the channel structure CHb.

Referring to FIG. 9B, a memory cell string STR″ may be defined along achannel structure CHc and a lower channel structure 319. The channelstructure CHc and the lower channel structure 319 may pass through agate stack structure GST″.

The gate stack structure GST″ may include a first stack structure ST1and a second stack structure ST2 disposed on the first stack structureST1. The first stack structure ST1 may include a lower conductivepattern 315 and first interlayer insulating layers 313. The lowerconductive pattern 315 may serve as a source select line and may bedisposed between the first interlayer insulating layers 313. The secondstack structure ST2 may include conductive patterns 323 and secondinterlayer insulating layers 321 alternately stacked on each other. Theconductive patterns 323 may serve as word lines and a drain select line.The lower channel structure 319 may pass through the first stackstructure ST1 and the channel structure CHc may pass through the secondstack structure ST2.

The memory cell string STR″ may be coupled to a lower source line 311disposed under the first stack structure ST1. The lower source line 311may include a doped semiconductor layer including at least one of ann-type dopant and a p-type dopant.

The lower channel structure 319 may include a doped semiconductor layer.For example, the lower channel structure 319 may include n-type dopedsilicon. The lower channel structure 319 may fill a lower hole 310passing through the first stack structure ST1. A sidewall of the lowerchannel structure 319 may be surrounded by a gate insulating layer 317.The lower channel structure 319 may be in contact with the lower sourceline 311.

As described with reference to FIGS. 8A and 8B, the channel structureCHc may include a channel layer 333, a core insulating layer 335, and adoped semiconductor layer 337. The channel layer 333 of the channelstructure CHc may be in contact with the lower channel structure 319.

A memory layer 331 may be disposed between the second stack structureST2 and the channel structure CHc and may surround the sidewall of thechannel structure CHc.

FIGS. 8A, 8B, 9A, and 9B illustrate the memory cell strings forming athree-dimensional memory cell array as examples. However, the presentdisclosure is not limited thereto. According to another embodiment, thememory cell array 40 described with reference to FIGS. 1 and 3 mayinclude a two-dimensional memory cell array.

Hereinafter, methods of manufacturing a semiconductor memory deviceaccording to an embodiment will be schematically described. Processes tobe described below may be carried out after a three-dimensional memorycell array or a two-dimensional memory cell array is formed over asubstrate including a logic circuit.

FIGS. 10A, 10B, and 11 are diagrams illustrating an embodiment of aprocess of forming a shielding pattern 481 overlapping a firstconductive group (461A, 461B, and 461C).

The first conductive group (461A, 461B, and 461C) may include bit lines461A, a first upper source line 461B, and a first upper wire 461Cpassing through an upper insulating layer 465 that extends to cover amemory cell array. The bit lines 461A and the first upper source line461B may be coupled to memory cell strings forming a memory cell array.A memory cell string according to an embodiment may be formed by thechannel structure CHa coupled to the lower source line 111 and the gatestack structure GST surrounding the channel structure CHa describedabove with reference to FIGS. 8A and 8B. A memory cell string accordingto another embodiment may be formed as the memory cell string (STR′ orSTR″) described above with reference to FIG. 9A or 9B.

The bit lines 461A and the first upper source line 461B may overlap thefirst region A1 of a substrate including a logic circuit and the firstupper wire 461C may overlap the second region A2 of the substrateincluding the logic circuit. The first region A1 may be a region whichoverlaps a memory cell array and the second region A2 may be a regionwhich does not overlap the memory cell array. The logic circuit mayinclude the transistors TR shown in FIG. 8A and may be connected to theconnection structures 25A, 25B, and 25C of the interconnection group asillustrated in FIG. 8A. As described with reference to FIG. 8A, theconnection structure 25C formed in the second region A2 may beelectrically coupled to the first upper wire 461C.

The first conductive group (461A, 461B, and 461C) described above mayinclude copper (Cu). The first conductive group (461A, 461B, and 461C)may be covered by a protective layer 471. The protective layer 471 mayprevent copper from diffusing and may include a material that may serveas an etch stop layer. According to an embodiment, the protective layer471 may include nitrogen doped silicon carbide (NDC) described withreference to FIGS. 8A and 8B. A conductive material forming the firstconductive group (461A, 461B, and 461C) may include various metals andthe protective layer 471 may be omitted.

The shielding pattern 481 may be formed after the first conductive group(461A, 461B, and 461C) is formed or the protective layer 471 is formed.The shielding pattern 481 may be formed using a Damascene process. Forexample, a process of forming the shielding pattern 481 may includeforming a first insulating layer 473 including a groove 473GV thatoverlaps the first conductive group (461A, 461B, and 461C) and fillingthe groove 473GV with a conductive material.

FIG. 10A and FIG. 10B are a plan view and a cross-sectional view,respectively, illustrating forming the first insulating layer 473including the groove 473GV. FIG. 10B is a cross-sectional view takenalong line I-I′ shown in FIG. 10A.

Referring to FIGS. 10A and 10B, forming the first insulating layer 473including the groove 473GV may include forming an oxide layer thatcovers the first conductive group (461A, 461B, and 461C), forming maskpatterns 475A, 475B, and 475C over the oxide layer, and etching theoxide layer by an etching process using the mask patterns 475A, 475B,and 475C as an etching barrier.

The mask patterns 475A, 475B, and 475C may be spaced apart from eachother. The mask patterns 475A, 475B, and 475C may include the first maskpatterns 475A overlapping the first upper source line 461B, the secondmask patterns 475B overlapping some of the bit lines 461A, and the thirdmask patterns 475C overlapping the first upper wire 461C. The groove473GV may extend to overlap the first region A1 and the second regionA2.

FIG. 11 is a cross-sectional diagram illustrating filling the groove473GV shown in FIG. 10B with a conductive material.

Referring to FIG. 11, the conductive material may include a metalbarrier layer formed along the surface of the groove 473GV and a metallayer formed on the metal barrier layer. For example, a metal barrierlayer may include a titanium nitride (TiN) layer and a metal layer mayinclude tungsten (W). The conductive material may be planarized by aplanarization process such as a Chemical Mechanical Polishing (CMP)method and mask patterns may be removed by the planarization process anda cleaning process.

The shielding pattern 481 may be formed in the groove 473GV shown inFIG. 10B by the process described above. The shielding pattern 481 mayextend to overlap the first region A1 and the second region A2.

FIGS. 12A and 12B are cross-sectional diagrams illustrating anembodiment of a process of forming first, second, and third contactpatterns 483A, 483B, and 483C.

Referring to FIGS. 12A and 12B, the process of forming the first,second, and third contact patterns 483A, 483B, and 483C may includeforming a second insulating layer 477, forming first, second, and thirdholes H1, H2, and H3, and filling the first, second, and third holes H1,H2, and H3 with a conductive material.

FIG. 12A is a cross-sectional diagram illustrating forming the secondinsulating layer 477 and forming the first, second, and third holes H1,H2, and H3.

Referring to FIG. 12A, the second insulating layer 477 may be formed onthe shielding pattern 481 to cover the first insulating layer 473. Thesecond insulating layer 477 may include an oxide layer. For example, thesecond insulating layer 477 may be silicon oxide using tetraethylorthosilicate (TEOS).

Forming the first, second, and third holes H1, H2, and H3 may includeforming a mask pattern 479 that includes a plurality of openings on thesecond insulating layer 477, and etching at least one of the protectivelayer 471, the first insulating layer 473, and the second insulatinglayer 477 by an etching process using the mask pattern 479 as an etchingbarrier. The first hole H1 may expose the first upper source line 461Band the shielding pattern 481, the second holes H2 may expose theshielding pattern 481, and the third hole H3 may expose the first upperwire 461C.

The first hole H1 may pass through the second insulating layer 477, thefirst insulating layer 473, and the protective layer 471 overlapping thefirst upper source line 461B. The second holes H2 may pass through thesecond insulating layer 477 overlapping the shielding pattern 481. Thethird hole H3 may pass through the second insulating layer 477, thefirst insulating layer 473, and the protective layer 471 overlapping thefirst upper wire 461C.

FIG. 12B is a cross-sectional diagram illustrating filling the first,second, and third holes H1, H2, and H3 shown in FIG. 12A with aconductive material.

Referring to FIG. 12B, the conductive material may include a metalbarrier layer formed along the surface of each of the first, second, andthird holes H1, H2, and H3, and a metal layer formed on the metalbarrier layer. For example, a metal barrier layer may include a titaniumnitride (TiN) layer and a metal layer may include tungsten (W). Theconductive material may be planarized by a planarization process such asa CMP method, and the mask patterns may be removed by the planarizationprocess and a cleaning process.

The first, second, and third contact patterns 483A, 483B, and 483C whichfill the first, second, and third holes H1, H2, and H3 shown in FIG.12A, respectively, may be formed by the process described above. Thefirst contact pattern 483A may fill the first hole H1 and may be incontact with the first upper source line 461B and the shielding pattern481. The second contact pattern 483B may fill the second holes H2,respectively, and may be in contact with the shielding pattern 481. Thethird contact pattern 483C may fill the third hole H3 and may be incontact with the first upper wire 461C. The third contact pattern 483Cmay be insulated from the shielding pattern 481 by the first insulatinglayer 473.

FIGS. 13A and 13B are cross-sectional diagrams illustrating anembodiment of a process of forming a second conductive group (491A,491B).

Referring to FIGS. 13A and 13B, forming the second conductive group(491A, 491B) may include forming a conductive layer 491 and forming asecond upper source line 491A and a second upper wire 491B by etchingthe conductive layer 491.

Referring to FIG. 13A, the conductive layer 491 may extend to cover thefirst, second, and third contact patterns 483A, 483B, and 483C. Theconductive layer 491 may have a structure in which a first metal barrierlayer, a metal layer, and a second metal barrier layer are stacked. Forexample, each of the first and second metal barrier layers may include atitanium nitride (TiN) layer and a metal layer may include aluminum (Al)having lower resistance than tungsten (W).

Mask patterns 485 may be disposed on the conductive layer 491.

Referring to FIG. 13B, the second upper source line 491A and the secondupper wire 491B separated from each other may be formed by an etchingprocess of the conductive layer 491 using the mask patterns 485 shown inFIG. 13A as etching barriers. The mask patterns 485 may be removed afterthe second upper source line 491A and the second upper wire 491B areformed.

The second upper source line 491A may overlap the bit lines 461A and maybe electrically coupled to the first upper source line 461B through theshielding pattern 481, the first contact pattern 483A, and the secondcontact patterns 483B. The second upper wire 491B may be electricallycoupled to the first upper wire 461C through the third contact pattern483C.

FIG. 14 is a block diagram illustrating the configuration of a memorysystem 1100 according to an embodiment.

Referring to FIG. 14, the memory system 1100 may include a memory device1120 and a memory controller 1110.

The memory device 1120 may be a multi-chip package including a pluralityof flash memory chips. The memory device 1120 may include bit lines anda first upper source line coupled to a memory cell array, and a firstupper wire spaced apart from the bit lines and the first upper sourceline. In addition, the memory device 1120 may include a second uppersource line overlapping and coupled to the first upper source line and ashielding pattern shielding the second upper source line from the bitlines. The shielding pattern may form an upper source contact portionthat couples the second upper source line overlapping the first uppersource line and the first upper source line to each other.

The memory controller 1110 may be configured to control the memorydevice 1120 and may include Static Random Access Memory (SRAM) 1111, aCentral Processing Unit (CPU) 1112, a host interface 1113, an errorcorrection block 1114, and a memory interface 1115. The SRAM 1111 mayserve as operational memory of the CPU 1112, the CPU 1112 may performgeneral control operations for data exchange of the memory controller1110, and the host interface 1113 may include a data exchange protocolof a host accessing the memory system 1100. The error correction block1114 may detect and correct error included in data read from the memorydevice 1120. The memory interface 1115 may interface with the memorydevice 1120. The memory controller 1110 may further include Read OnlyMemory (ROM) for storing code data for interfacing with the host.

The memory system 1100 having the above-described configuration may be amemory card or a Solid State Drive (SSD) in which the memory device 1120and the memory controller 1110 are combined. For example, when thememory system 1100 is an SSD, the memory controller 1110 may communicatewith an external device (e.g., a host) through one of various interfaceprotocols including a Universal Serial Bus (USB), a MultiMedia Card(MMC), Peripheral Component Interconnection-Express (PCI-E), SerialAdvanced Technology Attachment (SATA), Parallel Advanced TechnologyAttachment (PATA), a Small Computer Small Interface (SCSI), an EnhancedSmall Disk Interface (ESDI), and Integrated Drive Electronics (IDE).

FIG. 15 is a block diagram illustrating the configuration of a computingsystem 1200 according to an embodiment.

Referring to FIG. 15, the computing system 1200 may include a CPU 1220,Random Access Memory (RAM) 1230, a user interface 1240, a modem 1250,and a memory system 1210 that are electrically coupled to a system bus1260. When the computing system 1200 is a mobile device, a battery forsupplying an operation voltage to the computing system 1200 may befurther included, and an application chipset, a camera image processor(CIS), a mobile DRAM, and the like may be further included.

The memory system 1210 may include a memory device 1212 and a memorycontroller 1211. The memory device 1212 may be configured in the samemanner as the memory device 1120 described above with reference to FIG.14. The memory controller 1211 may be configured in the same manner asthe memory controller 1100 described above with reference to FIG. 14.

According to the present disclosure, noise due to coupling capacitancebetween upper wires and a bit line may be reduced by overlapping ashielding pattern and a bit line that is coupled to a memory cell arrayeach other and disposing the upper wires in a higher level than theshielding pattern. Accordingly, according to the present disclosure,constraints on arrangement degree of freedom with respect to the upperwires may be reduced.

What is claimed is:
 1. A semiconductor memory device, comprising: asubstrate including a logic circuit; a memory cell array disposed overthe substrate; a first conductive group including a plurality of bitlines and a first upper source line that are coupled to the memory cellarray, and a first upper wire that is coupled to the logic circuit,wherein the plurality of bit lines are spaced apart from each other, andthe plurality of bit lines are spaced apart from the first upper sourceline; an insulating structure covering the first conductive group; asecond conductive group including a second upper source line thatoverlaps the plurality of bit lines and the first upper source line anda second upper wire that overlaps the first upper wire, the secondconductive group being disposed over the insulating structure; and anupper source contact portion embedded in the insulating structure,wherein the upper source contact portion includes a first contactpattern extending from the first upper source line towards the secondupper source line and a shielding pattern extending from a sidewall ofthe first contact pattern to overlap the plurality of bit lines.
 2. Thesemiconductor memory device of claim 1, wherein the upper source contactportion further includes a plurality of second contact patternsextending from the shielding pattern towards the second upper sourceline.
 3. The semiconductor memory device of claim 1, further comprisinga third contact pattern passing through the insulating structure andextending from the first upper wire towards the second upper wire. 4.The semiconductor memory device of claim 1, wherein the second upperwire is a power line configured to transfer at least one of a powervoltage and a ground voltage.
 5. The semiconductor memory device ofclaim 1, wherein the insulating structure is disposed between theplurality of bit lines and the shielding pattern.
 6. The semiconductormemory device of claim 1, wherein the second conductive group includes aconductive material having lower resistance than the upper sourcecontact portion.
 7. A semiconductor memory device comprising: asubstrate including a logic circuit; a memory cell array disposed overthe substrate; a first conductive group including a plurality of bitlines and a first upper source line that are coupled to the memory cellarray, and a first upper wire that is coupled to the logic circuit,wherein the plurality of bit lines are spaced apart from each other, andthe plurality of bit lines are spaced apart from the first upper sourceline; an insulating structure covering the first conductive group,wherein the insulating structure comprises a protective layer coveringthe plurality of bit lines and a first insulating layer covering theprotective layer; and a shielding pattern formed over the firstinsulating layer and overlapping the plurality of bit lines, wherein theprotective layer partially covers the first upper wire and the firstupper source line, and wherein the shielding pattern partially overlapsthe first upper source line and the first upper wire.
 8. Thesemiconductor memory device of claim 7, further comprising a firstcontact pattern extending from the first upper source line and away fromthe first upper source line, wherein the shielding pattern extends froma sidewall of the first contact pattern to overlap the plurality of bitlines.
 9. A semiconductor memory device, comprising: a substrateincluding a logic circuit; a memory cell array disposed over thesubstrate; a conductive group including a plurality of bit lines and anupper source line that are coupled to the memory cell array, and anupper wire that is coupled to the logic circuit, wherein the pluralityof bit lines are spaced apart from each other, and the plurality of bitlines are spaced apart from the upper source line; a shielding patternoverlapping the plurality of bit lines; and an insulating layer betweenthe shielding pattern and the conductive group to cover the conductivegroup.